Open AccessImproved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
Author(s) -
Lie Cai,
Chao-Zhi Xu,
Feibing Xiong,
Ming-Jie Zhao,
Haifeng Lin,
Hong-Yi Lin,
Dong Sun
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0054062
Subject(s) - quantum well , electroluminescence , optoelectronics , diode , materials science , indium , indium gallium nitride , polarization (electrochemistry) , light emitting diode , electron , quantum dot , physics , layer (electronics) , optics , laser , nanotechnology , chemistry , quantum mechanics
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