Open AccessSelective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
Author(s) -
Falco Meier,
Maximilian Protte,
Elias Baron,
Martin Feneberg,
R. Goldhahn,
D. Reuter,
D. J. As
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0053865
Subject(s) - materials science , silicon carbide , silicon , gallium nitride , gallium , silicon nitride , carbide , nanocrystalline silicon , silicon dioxide , nitride , locos , analytical chemistry (journal) , crystalline silicon , optoelectronics , nanotechnology , metallurgy , chemistry , organic chemistry , layer (electronics) , amorphous silicon
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