Open AccessPiezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
Author(s) -
Hong-Quan Nguyen,
Thanh Nguyen,
Philip Tanner,
TuanKhoa Nguyen,
Abu Riduan Md Foisal,
Jarred Fastier-Wooller,
Hung D. Nguyen,
HoangPhuong Phan,
NamTrung Nguyen,
Dzung Viet Dao
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0053701
Subject(s) - high electron mobility transistor , materials science , optoelectronics , wide bandgap semiconductor , gallium nitride , heterojunction , transistor , saturation current , piezoelectricity , voltage , nanotechnology , electrical engineering , composite material , layer (electronics) , engineering
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