Open AccessLow barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy
Author(s) -
Yeonhoo Kim,
Roxanne Tutchton,
Ren Liu,
Sergiy Krylyuk,
JianXin Zhu,
Albert V. Davydov,
Young Joon Hong,
Jinkyoung Yoo
Publication year - 2021
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0052596
Subject(s) - heterojunction , materials science , ohmic contact , schottky barrier , nanorod , semiconductor , schottky diode , optoelectronics , fermi level , density functional theory , condensed matter physics , work function , nanotechnology , computational chemistry , diode , chemistry , physics , layer (electronics) , quantum mechanics , electron
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