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Effect of the native oxide on the surface passivation of Si by Al2O3
Author(s) -
Michael N. Getz,
Marco Povoli,
E. V. Monakhov
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0051215
Subject(s) - passivation , oxide , annealing (glass) , materials science , silicon , analytical chemistry (journal) , capacitance , saturation current , saturation (graph theory) , silicon oxide , layer (electronics) , optoelectronics , chemistry , nanotechnology , voltage , composite material , metallurgy , electrode , electrical engineering , chromatography , silicon nitride , mathematics , engineering , combinatorics

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