Open AccessPolarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
Author(s) -
O. Ambacher,
B. Christian,
M. Yassine,
M. Baeumler,
Stefano Leone,
R. Quay
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0049185
Subject(s) - heterojunction , materials science , wurtzite crystal structure , optoelectronics , wide bandgap semiconductor , epitaxy , piezoelectricity , ternary operation , polarization (electrochemistry) , condensed matter physics , nanotechnology , zinc , chemistry , composite material , physics , layer (electronics) , computer science , metallurgy , programming language
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