Open AccessLow-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature
Author(s) -
Paul Schmiedeke,
Andreas Thurn,
Sonja Matich,
Markus Döblinger,
Jonathan J. Finley,
Gregor Koblmüller
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0048807
Subject(s) - lasing threshold , materials science , optoelectronics , gallium arsenide , laser , indium gallium arsenide , nanowire , quantum well , indium arsenide , optics , physics , wavelength
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