Open AccessThermal characteristics of InGaN-based green micro-LEDs
Author(s) -
Feng Yang,
Mengyuan Zhanghu,
ByungRyool Hyun,
Zhaojun Liu
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0047914
Subject(s) - light emitting diode , electroluminescence , optoelectronics , passivation , materials science , quantum tunnelling , junction temperature , diode , ternary operation , atmospheric temperature range , wide bandgap semiconductor , layer (electronics) , active layer , equivalent series resistance , thermal , condensed matter physics , nanotechnology , voltage , physics , thermodynamics , computer science , programming language , thin film transistor , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom