Open AccessDischarge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias
Author(s) -
Min Young Yoon,
H. J. Yeom,
JungHyung Kim,
Won Chegal,
Yong Jai Cho,
Deuk-Chul Kwon,
JongRyul Jeong,
HyoChang Lee
Publication year - 2021
Publication title -
physics of plasmas
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.75
H-Index - 160
eISSN - 1089-7674
pISSN - 1070-664X
DOI - 10.1063/5.0047811
Subject(s) - wafer , etching (microfabrication) , plasma , inductively coupled plasma , reactive ion etching , analytical chemistry (journal) , physics , plasma etching , radio frequency , layer (electronics) , materials science , optoelectronics , nanotechnology , electrical engineering , chemistry , engineering , quantum mechanics , chromatography
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