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Effect of thickness on metal-to-semiconductor transition in 2-dimensional TiN thin films
Author(s) -
Manosi Roy,
Nikhil Reddy Mucha,
Svitlana Fialkova,
D. Kumar
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0046243
Subject(s) - tin , materials science , sapphire , thin film , electrical resistivity and conductivity , titanium nitride , pulsed laser deposition , conductivity , wide bandgap semiconductor , arrhenius equation , nitride , semiconductor , analytical chemistry (journal) , optoelectronics , composite material , metallurgy , optics , nanotechnology , laser , activation energy , layer (electronics) , chemistry , physics , electrical engineering , engineering , chromatography , organic chemistry

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