z-logo
open-access-imgOpen Access
Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
Author(s) -
Kian Hua Tan,
Wan Khai Loke,
Satrio Wicaksono,
Soon Fatt Yoon
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0045483
Subject(s) - superlattice , materials science , epitaxy , optoelectronics , transmission electron microscopy , dislocation , gallium arsenide , gallium antimonide , indium , substrate (aquarium) , indium arsenide , thin film , layer (electronics) , condensed matter physics , nanotechnology , composite material , physics , oceanography , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom