Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
Author(s) -
Kian Hua Tan,
Wan Khai Loke,
Satrio Wicaksono,
Soon Fatt Yoon
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0045483
Subject(s) - superlattice , materials science , epitaxy , optoelectronics , transmission electron microscopy , dislocation , gallium arsenide , gallium antimonide , indium , substrate (aquarium) , indium arsenide , thin film , layer (electronics) , condensed matter physics , nanotechnology , composite material , physics , oceanography , geology
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