β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization | Zendy

Tobias Hadamek | Zendy; Agham Posadas | Zendy; Fatima Al-Quaiti | Zendy; David J. Smith | Zendy; Martha R. McCartney | Zendy; Alexander A. Demkov | Zendy

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β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization

Author(s) -

Tobias Hadamek,

Agham Posadas,

Fatima Al-Quaiti,

David J. Smith,

Martha R. McCartney,

Alexander A. Demkov

Publication year - 2021

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0044923

Subject(s) - molecular beam epitaxy , electron diffraction , x ray photoelectron spectroscopy , transmission electron microscopy , materials science , stoichiometry , crystallography , evaporation , layer (electronics) , diffraction , thin film , reflection (computer programming) , analytical chemistry (journal) , epitaxy , chemistry , optics , nanotechnology , nuclear magnetic resonance , physics , organic chemistry , chromatography , computer science , thermodynamics , programming language

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