Open AccessElectron mobility in (100) homoepitaxial layers of phosphorus-doped diamond
Author(s) -
Ingrid Stenger,
M.A. Pinault-Thaury,
N. Temahuki,
Rémi Gillet,
Solange Temgoua,
H. Bensalah,
E. Chikoidze,
Yves Dumont,
Julien Barjon
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0044326
Subject(s) - diamond , electron mobility , electron , electrical resistivity and conductivity , doping , materials science , condensed matter physics , hall effect , electron transport chain , chemistry , optoelectronics , physics , composite material , biochemistry , quantum mechanics
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