Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate
Author(s) -
Zhibo Li,
Samuel Shutts,
Ying Xue,
Wei Luo,
Kei May Lau,
Peter M. Smowton
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0043815
Subject(s) - quantum well , stark effect , lasing threshold , optoelectronics , quantum confined stark effect , materials science , quantum dot laser , silicon , substrate (aquarium) , laser , quantum dot , absorption (acoustics) , electro absorption modulator , absorption edge , molecular beam epitaxy , semiconductor laser theory , optics , wavelength , spectral line , physics , semiconductor , epitaxy , nanotechnology , oceanography , band gap , composite material , astronomy , geology , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom