Open AccessElectronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
Author(s) -
Keat Hoe Yeoh,
KhianHooi Chew,
Tiem Leong Yoon,
Duu Sheng Ong,
Rusi
Publication year - 2021
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0043063
Subject(s) - dopant , materials science , density functional theory , magnetism , doping , magnetization , condensed matter physics , gallium nitride , gallium , ab initio , ab initio quantum chemistry methods , nitride , magnetic semiconductor , optoelectronics , nanotechnology , computational chemistry , chemistry , magnetic field , metallurgy , physics , molecule , quantum mechanics , layer (electronics) , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom