Open AccessErratum: “Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode” [AIP Adv. 8, 115011 (2018)]
Author(s) -
Kazuki Isobe,
Masamichi Akazawa
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0041641
Subject(s) - schottky barrier , work function , materials science , schottky diode , optoelectronics , wide bandgap semiconductor , diode , metal , metal–semiconductor junction , work (physics) , condensed matter physics , physics , metallurgy , quantum mechanics
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