Open AccessA first-principles understanding of point defects and impurities in GaN
Author(s) -
John L. Lyons,
Darshana Wickramaratne,
Chris G. Van de Walle
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0041506
Subject(s) - impurity , dopant , context (archaeology) , gallium nitride , materials science , boron nitride , doping , crystallographic defect , semiconductor , wide bandgap semiconductor , nitride , condensed matter physics , band gap , engineering physics , nanotechnology , chemical physics , optoelectronics , chemistry , physics , quantum mechanics , paleontology , layer (electronics) , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom