Open AccessMechanism analysis of irradiation location dependent leakage current for zinc oxide thin-film transistors
Author(s) -
Ting Qin,
Zewen Qu,
Lianwen Deng,
Shengxiang Huang,
Congwei Liao,
Heng Luo,
Chen Li,
Yuhui Peng,
Min Tang,
Xiaohui Gao
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0041411
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , leakage (economics) , irradiation , gate oxide , oxide , capacitance , zinc , semiconductor , electrode , electrical engineering , nanotechnology , chemistry , metallurgy , voltage , physics , engineering , layer (electronics) , nuclear physics , economics , macroeconomics
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