Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector
Author(s) -
Yanxu Zhu,
Qixuan Li,
Zhuang Yang,
Wang Cai,
Zhao Wei
Publication year - 2021
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0041331
Subject(s) - materials science , optoelectronics , ferroelectricity , high electron mobility transistor , photodetector , heterojunction , responsivity , transistor , voltage , electrical engineering , dielectric , engineering
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