Smooth, low rate, selective GaN/AlGaN etch
Author(s) -
Mohammadsadegh Beheshti,
Russell J. Westerman
Publication year - 2021
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0041148
Subject(s) - materials science , heterojunction , optoelectronics , surface roughness , wide bandgap semiconductor , inductively coupled plasma , volumetric flow rate , surface finish , fabrication , layer (electronics) , plasma , nanotechnology , composite material , alternative medicine , pathology , medicine , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom