Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | Zendy

Joel T. Asubar | Zendy; Zenji Yatabe | Zendy; D. Gregušová | Zendy; Tamotsu Hashizume | Zendy

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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Author(s) -

Joel T. Asubar,

Zenji Yatabe,

D. Gregušová,

Tamotsu Hashizume

Publication year - 2021

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0039564

Subject(s) - passivation , optoelectronics , wide bandgap semiconductor , materials science , band gap , gallium nitride , semiconductor , surface states , transistor , interface (matter) , engineering physics , capacitance , electronics , electronic engineering , voltage , nanotechnology , surface (topology) , electrical engineering , physics , engineering , layer (electronics) , geometry , mathematics , electrode , capillary action , quantum mechanics , composite material , capillary number

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