Multibit non-volatile memory based on WS2 transistor with engineered gate stack
Author(s) -
Xinyi Zhu,
Longfei He,
Yafen Yang,
Kai Zhang,
Hao Zhu,
Lin Chen,
Qingqing Sun
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0037780
Subject(s) - materials science , stack (abstract data type) , non volatile memory , optoelectronics , dielectric , data retention , memory cell , transistor , gate dielectric , electronic engineering , computer science , voltage , electrical engineering , engineering , programming language
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