A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements | Zendy

Jordan R. Nicholls | Zendy; Arnar M. Vidarsson | Zendy; Daniel Haasmann | Zendy; E.Ö. Sveinbjörnsson | Zendy; Sima Dimitrijev | Zendy

Open Access

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Author(s) -

Jordan R. Nicholls,

Arnar M. Vidarsson,

Daniel Haasmann,

E.Ö. Sveinbjörnsson,

Sima Dimitrijev

Publication year - 2021

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0037744

Subject(s) - materials science , quantum tunnelling , optoelectronics , transistor , oxide , capacitor , semiconductor , conductance , wide bandgap semiconductor , thermal conduction , spectroscopy , fabrication , field effect transistor , analytical chemistry (journal) , condensed matter physics , electrical engineering , chemistry , voltage , physics , medicine , alternative medicine , quantum mechanics , pathology , chromatography , metallurgy , composite material , engineering

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