Open AccessAlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high- κ dielectric
Author(s) -
Sarah Seidel,
Alexander Schmid,
Christian Miersch,
J. Schubert,
Johannes Heitmann
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0037692
Subject(s) - materials science , optoelectronics , epitaxy , passivation , transistor , electron mobility , heterojunction , induced high electron mobility transistor , transmission electron microscopy , dielectric , semiconductor , leakage (economics) , atomic layer deposition , high electron mobility transistor , layer (electronics) , nanotechnology , electrical engineering , engineering , voltage , economics , macroeconomics
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