Open AccessCarbon cluster formation and mobility degradation in 4H-SiC MOSFETs
Author(s) -
Zhaofu Zhang,
Zhen Wang,
Yuzheng Guo,
John Robertson
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0037241
Subject(s) - carbon fibers , cluster (spacecraft) , materials science , degradation (telecommunications) , chemical physics , mosfet , kinetics , wide bandgap semiconductor , silicon carbide , optoelectronics , chemistry , electronic engineering , transistor , physics , metallurgy , composite material , voltage , quantum mechanics , composite number , computer science , engineering , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom