Open AccessIntrinsic memristive mechanisms in 2D layered materials for high-performance memory
Author(s) -
Hao Li,
Li Tao,
Jianbin Xu
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0035764
Subject(s) - resistive random access memory , materials science , graphene , non volatile memory , random access memory , ferroelectricity , memristor , nanotechnology , optoelectronics , computer science , engineering physics , electronic engineering , electrical engineering , physics , voltage , engineering , dielectric , computer hardware
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