Open AccessImpact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
Author(s) -
T. François,
L. Grenouillet,
J. Coignus,
Nicolas Vaxelaire,
C. Carabasse,
F. Aussenac,
S. Chevalliez,
Stefan Slesazeck,
Claudia Richter,
P. Chiquet,
M. Bocquet,
Uwe Schroeder,
Thomas Mikolajick,
F. Gaillard,
E. Nowak
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0035650
Subject(s) - ferroelectricity , capacitor , materials science , optoelectronics , dielectric , tin , polarization (electrochemistry) , scaling , planar , voltage , electrical engineering , chemistry , metallurgy , computer graphics (images) , computer science , engineering , geometry , mathematics
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