Open AccessGrowth of InN ultrathin films on AlN for the application to field-effect transistors
Author(s) -
Dayeon Jeong,
Atsushi Kobayashi,
Kohei Ueno,
Hiroshi Fujioka
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0035203
Subject(s) - materials science , indium nitride , optoelectronics , heterojunction , nitride , sputtering , transistor , field effect transistor , indium , wide bandgap semiconductor , aluminium , nanotechnology , thin film , layer (electronics) , metallurgy , electrical engineering , voltage , engineering
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