Open AccessAdvances of beveled mesas for GaN-based trench Schottky barrier diodes
Author(s) -
Fuping Huang,
Xingyu Jia,
Yajin Liu,
Kangkai Tian,
Chunshuang Chu,
Quan Zheng,
Yonghui Zhang,
Zhen Xin,
ZiHui Zhang,
Qing Li
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0033844
Subject(s) - bevel , schottky diode , materials science , schottky barrier , optoelectronics , trench , diode , breakdown voltage , electric field , semiconductor , semiconductor device , metal–semiconductor junction , voltage , layer (electronics) , electrical engineering , composite material , physics , structural engineering , quantum mechanics , engineering
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