Open AccessInfluence of adjacent isotype layers on the characteristics of n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes
Author(s) -
E. V. Kontrosh,
В. В. Лебедев,
Vitaliy S. Kalinovsky,
G. V. Klimko,
В. М. Андреев
Publication year - 2020
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/5.0032144
Subject(s) - optoelectronics , diode , materials science , quantum tunnelling , gallium arsenide , converters , photoelectric effect , tunnel diode , photonics , concentrator , photovoltaics , optical power , photovoltaic system , power (physics) , optics , electrical engineering , laser , physics , engineering , quantum mechanics
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