Open AccessEffect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga2O3 crystals detected by photocurrent measurement
Author(s) -
Masahiko Nakanishi,
Man Hoi Wong,
Tomohiro Yamaguchi,
Tohru Honda,
Masataka Higashiwaki,
Takeyoshi Onuma
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0031937
Subject(s) - photocurrent , impurity , materials science , annealing (glass) , ion implantation , crystallinity , analytical chemistry (journal) , photoconductivity , doping , ion , acceptor , crystal (programming language) , optoelectronics , chemistry , condensed matter physics , physics , organic chemistry , chromatography , computer science , composite material , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom