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Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Author(s) -
Rinat Yapparov,
Yi Chao Chow,
Cheyenne Lynsky,
Feng Wu,
Shuji Nakamura,
James S. Speck,
S. Marcinkevičius
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0031863
Subject(s) - photoluminescence , quantum well , spontaneous emission , laser linewidth , materials science , carrier lifetime , recombination , wavelength , quantum efficiency , quantum confined stark effect , excitation , molecular physics , atomic physics , condensed matter physics , optoelectronics , physics , optics , laser , chemistry , silicon , biochemistry , quantum mechanics , gene

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