Open AccessOn impact ionization and avalanche in gallium nitride
Author(s) -
Dong Ji,
Srabanti Chowdhury
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0031504
Subject(s) - impact ionization , gallium nitride , avalanche breakdown , optoelectronics , engineering physics , wide bandgap semiconductor , ionization , materials science , electric field , semiconductor , gallium , semiconductor device , electric breakdown , nitride , avalanche diode , nanotechnology , breakdown voltage , physics , electrical engineering , engineering , voltage , dielectric , ion , layer (electronics) , quantum mechanics , metallurgy
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