Open AccessInterface characterization of Al2O3/m-plane GaN structure
Author(s) -
Shota Kaneki,
Tamotsu Hashizume
Publication year - 2021
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0031232
Subject(s) - materials science , annealing (glass) , epitaxy , analytical chemistry (journal) , diode , capacitance , optoelectronics , layer (electronics) , chemistry , nanotechnology , chromatography , electrode , composite material
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