Open AccessMonolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers
Author(s) -
H. Mehdi,
M. Martin,
S. David,
Jean-Michel Hartmann,
J. Moeyaert,
Marie-Léonor Touraton,
Christophe Jany,
Léopold Virot,
Jérémy Da Fonseca,
J. Coignus,
D. Blachier,
T. Baron
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0030677
Subject(s) - responsivity , photodetector , dark current , materials science , optoelectronics , epitaxy , silicon , wafer , gallium arsenide , absorption (acoustics) , substrate (aquarium) , nanotechnology , oceanography , layer (electronics) , geology , composite material
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