Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric | Zendy

Eddy Simoen | Zendy; Barry O’Sullivan | Zendy; N. Ronchi | Zendy; G. Van den bosch | Zendy; D. Linten | Zendy; Jan Van Houdt | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

Author(s) -

Eddy Simoen,

Barry O’Sullivan,

N. Ronchi,

G. Van den bosch,

D. Linten,

Jan Van Houdt

Publication year - 2021

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0029833

Subject(s) - materials science , optoelectronics , gate dielectric , noise (video) , doping , dielectric , infrasound , transistor , stack (abstract data type) , planar , field effect transistor , electric field , high κ dielectric , trapping , flicker noise , noise figure , electrical engineering , physics , voltage , artificial intelligence , image (mathematics) , computer science , engineering , quantum mechanics , programming language , cmos , ecology , amplifier , biology , computer graphics (images) , acoustics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research