Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide
Author(s) -
Maximilian Lederer,
André Reck,
Konstantin Mertens,
Ricardo Olivo,
Pratik Bagul,
Alireza M. Kia,
B. Volkmann,
Thomas Kämpfe,
Konrad Seidel,
Lukas M. Eng
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0029635
Subject(s) - materials science , texture (cosmology) , orthorhombic crystal system , microstructure , ferroelectricity , hafnium , crystallization , phase (matter) , layer (electronics) , thin film , oxide , crystallography , optoelectronics , chemical engineering , composite material , dielectric , metallurgy , crystal structure , nanotechnology , chemistry , zirconium , organic chemistry , artificial intelligence , computer science , engineering , image (mathematics)
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