Open AccessOrigin of performance improvement in solution-processed indium–gallium–zinc-oxide thin-film transistors having thin active layer and asymmetric dual gate structure
Author(s) -
Jeongmin Kim,
Jaewook Jeong
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0029185
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , active layer , threshold voltage , gate oxide , indium , stress (linguistics) , layer (electronics) , nanotechnology , electrical engineering , voltage , engineering , linguistics , philosophy
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