Open AccessDefect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition
Author(s) -
Takuya Maeda,
Mitsuru Okigawa,
Yuji Katō,
Isao Takahashi,
Takashi Shinohe
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0028985
Subject(s) - thermionic emission , chemical vapor deposition , schottky diode , materials science , optoelectronics , diode , schottky barrier , reverse leakage current , sapphire , schottky effect , analytical chemistry (journal) , chemistry , optics , laser , physics , chromatography , quantum mechanics , electron
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom