Open AccessErbium energy levels in GaN grown by hydride vapor phase epitaxy
Author(s) -
Y. Q. Yan,
T. B. Smith,
J. Li,
J. Y. Lin,
H. X. Jiang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0028470
Subject(s) - erbium , epitaxy , materials science , photoluminescence , stark effect , optoelectronics , excited state , crystal (programming language) , laser , hydride , wide bandgap semiconductor , doping , analytical chemistry (journal) , spectral line , atomic physics , chemistry , optics , nanotechnology , metal , physics , layer (electronics) , astronomy , chromatography , computer science , metallurgy , programming language
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