Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
Author(s) -
P. Ruterana,
M. Morales,
Nicolas Chery,
Thi Huong Ngo,
Marie-Pierre Chauvat,
Kaddour Lekhal,
B. Damilano,
Bernard Gil
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0027119
Subject(s) - materials science , photoluminescence , optoelectronics , quantum well , epitaxy , diffraction , stack (abstract data type) , layer (electronics) , barrier layer , transmission electron microscopy , optics , nanotechnology , laser , physics , computer science , programming language
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