Open AccessBandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
Author(s) -
R. Kudrawiec,
D. Hommel
Publication year - 2020
Publication title -
applied physics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.084
H-Index - 66
ISSN - 1931-9401
DOI - 10.1063/5.0025371
Subject(s) - wurtzite crystal structure , band gap , materials science , nitride , boron nitride , dopant , optoelectronics , wide bandgap semiconductor , semiconductor , strain engineering , characterization (materials science) , doping , nanotechnology , metallurgy , zinc , silicon , layer (electronics)
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