Thickness-dependent thermoelectric properties of Si1−xGex films formed by Al-induced layer exchange | Zendy

Tomoki Ozawa | Zendy; K. Kusano | Zendy; Masayuki Murata | Zendy; Atsushi Yamamoto | Zendy; Takashi Suemasu | Zendy; Kaoru Toko | Zendy

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Thickness-dependent thermoelectric properties of Si1−xGex films formed by Al-induced layer exchange

Author(s) -

Tomoki Ozawa,

K. Kusano,

Masayuki Murata,

Atsushi Yamamoto,

Takashi Suemasu,

Kaoru Toko

Publication year - 2021

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0025099

Subject(s) - seebeck coefficient , materials science , thermoelectric effect , layer (electronics) , electrical resistivity and conductivity , thermal conductivity , substrate (aquarium) , thermoelectric materials , dimensionless quantity , figure of merit , thin film , optoelectronics , composite material , condensed matter physics , analytical chemistry (journal) , nanotechnology , electrical engineering , thermodynamics , chemistry , oceanography , physics , chromatography , geology , engineering

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