Open AccessTrapping of multiple H atoms at the Ga(1) vacancy in β -Ga2O3
Author(s) -
W. Beall Fowler,
Michael Stavola,
Ying Qin,
Philip Weiser
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0024269
Subject(s) - vacancy defect , trapping , hydrogen , work (physics) , atomic physics , crystallography , crystallographic defect , materials science , chemistry , physics , quantum mechanics , ecology , organic chemistry , biology
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