Open AccessTemperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates
Author(s) -
Ryota Ishii,
Akira Yoshikawa,
Kazuhiro Nagase,
Mitsuru Funato,
Yoichi Kawakami
Publication year - 2020
Publication title -
aip advances
Language(s) - Estonian
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0024179
Subject(s) - quantum efficiency , electroluminescence , optoelectronics , light emitting diode , materials science , auger effect , diode , ultraviolet , oled , auger , layer (electronics) , atomic physics , physics , nanotechnology
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