Crystal growth and flat-band effects on thermoelectric properties of Fe2TiAl-based full-Heusler thin films
Author(s) -
Y. Kurosaki,
Shin Yabuuchi,
A. Nishide,
N. Fukatani,
Jun Hayakawa
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0023660
Subject(s) - thermoelectric effect , materials science , seebeck coefficient , thin film , semimetal , condensed matter physics , annealing (glass) , thermoelectric materials , band gap , epitaxy , fermi level , amorphous solid , optoelectronics , electron , crystallography , metallurgy , nanotechnology , thermal conductivity , composite material , chemistry , thermodynamics , physics , layer (electronics) , quantum mechanics
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