Open Accessα-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition
Author(s) -
Giang T. Dang,
Shota Sato,
Yuki Tagashira,
Tatsuya Yasuoka,
Li Liu,
Toshiyuki Kawaharamura
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0023041
Subject(s) - materials science , heterojunction , doping , chemical vapor deposition , schottky barrier , schottky diode , fermi level , analytical chemistry (journal) , optoelectronics , diode , electron , chemistry , chromatography , physics , quantum mechanics
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