z-logo
open-access-imgOpen Access
Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons
Author(s) -
Kung-Chu Chen,
JennGwo Hwu
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0022326
Subject(s) - diode , electron , coupling (piping) , semiconductor , voltage , materials science , insulator (electricity) , optoelectronics , capacitive coupling , concentric , biasing , condensed matter physics , atomic physics , physics , geometry , mathematics , quantum mechanics , metallurgy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom