Open AccessThermal conductivity of irradiated porous silicon down to the oxide limit investigated by Raman thermometry and scanning thermal microscopy
Author(s) -
A.M. Massoud,
PierreOlivier Chapuis,
B. Canut,
JeanMarie Bluet
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0020656
Subject(s) - materials science , amorphous solid , scanning electron microscope , thermal conductivity , porous silicon , raman spectroscopy , analytical chemistry (journal) , amorphous silicon , silicon , porosity , wafer , crystalline silicon , composite material , optics , nanotechnology , optoelectronics , crystallography , chemistry , physics , chromatography
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