Open AccessBand alignment at β -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
Author(s) -
Sai Lyu,
Alfredo Pasquarello
Publication year - 2020
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0020442
Subject(s) - wurtzite crystal structure , heterojunction , materials science , hybrid functional , dangling bond , wide bandgap semiconductor , epitaxy , valence band , density functional theory , chemical bond , crystallography , band gap , condensed matter physics , optoelectronics , computational chemistry , chemistry , nanotechnology , physics , silicon , layer (electronics) , hexagonal crystal system , organic chemistry
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